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Our company uses scientific proportioning and advanced ingot casting technology. The products we produce have the characteristics of low impurities and high efficiency, making them excellent raw materials for monocrystalline silicon rods.
| Project | Technical Parameters | ||
|---|---|---|---|
| Surface Quality | No visible impurity shadows, no damage | ||
| Conductivity Type/Dopant | P/N | ||
| Resistivity | ≥20Ω·cm | ||
| Minority Carrier Lifetime | ≥8μs | ||
| Oxygen Concentration | ≤0.8 X1017atoms/cm3 | ||
| Carbon Concentration | ≤0.5 X1017atoms/cm3 | ||
| Growth Method | DSS | ||
