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Monocrystalline silicon is a crystal with a basically complete lattice structure. It has different properties in different directions and is a good semiconductor material. Monocrystalline silicon rods are grown from the melt using the Czochralski method or the floating zone method in industrial production. The main indicators include minority carrier lifetime, oxygen content, etc. Monocrystalline silicon rods are the raw material for producing monocrystalline silicon wafers.
| Project | Technical Parameters | |
|---|---|---|
| Side Length | 166mm±0.25mm / 182.2mm±0.25mm | 166mm±0.25mm / 182.2mm±0.25mm |
| Diameter | 223mm±0.25mm / 247mm±0.25mm | 223mm±0.25mm / 247mm±0.25mm |
| Perpendicularity | 90℃±0.2 | 90℃±0.2 |
| Crystal Orientation | <100>±3° | <100>±3° |
| Roughness | Ra≤0.3um | Ra≤0.3um |
| Bevel | ≤1mm | ≤1mm |
| Resistivity | 0.4-1.6Ω·cm | 0.4-1.1Ω·cm |
| Minority Carrier Lifetime | ≥800μs（BCT-400） | ≥70μs（BCT-400） |
| Oxygen Concentration | ≤6.0 X1017atoms/cm3 | ≤6.0 X1017atoms/cm3 |
| Carbon Concentration | ≤0.5 X1017atoms/cm3 | ≤0.5 X1017atoms/cm3 |
| Growth Method | CZ Czochralski Method | CZ Czochralski Method |
| Conductivity Type/Dopant | N/Phosphorus Doped | P/Boron Doped |
